| PART |
Description |
Maker |
| MRF9180 MRF9180S |
MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETs
880 MHz 170 W 26 V LATERAL N-CHANNEL RF POWER MOSFETs
880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| Q62703-Q1547 Q62703-Q1093 SFH484_5 Q62703-Q1092 SF |
From old datasheet system
GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm 镓铝砷红外光Lumineszenzdioden 880纳米镓铝砷红外辐射器880纳米
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| SFH487P Q62703-Q517 |
GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MRF9085 MRF9085LR3 MRF9085LSR3 |
128K 3.3 VOLT SERIAL CONFIGURATION PROM
880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MRF5S9070NR1 |
880 MHz, 70 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
RF Power Field Effect Transistors
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| Q62702P5302 Q62702P5303 SFH4881 |
IR-Lumineszenzdiode (880 nm) im TO-46-Geh?use
|
OSRAM GmbH
|
| 591-7101-102 |
3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
DIALIGHT CORP
|
| OIS-345880 OIS-345880-X-T |
Series 345 - 1206 Sqint-LED 45隆? IR high intensity 880 nm
Series 345 - 1206 Sqint-LED 45° IR high intensity 880 nm
|
OSA Opto Light GmbH
|
| EMRS-6HX1 |
E-Series Surface Mount Mixer 880 . 915 MHz
|
MACOM[Tyco Electronics]
|
| TSV632 TSV632AID_DT TSV632AIST TSV632ID_DT TSV632I |
Rail-to-rail input/output 60 μA 880 kHz operational amplifiers
Rail-to-rail input/output 60 楼矛A 880 kHz operational amplifiers
|
STMicroelectronics
|
| AWB7122P8 AWB7122P7 |
1.805 - 1.880 GHz Small-Cell Power Amplifier Module
|
Skyworks Solutions
|
